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(R)
T835-600G T850-600G
HIGH PERFORMANCE TRIAC
FEATURES HIGH COMMUTATION PREFORMANCES SNUBBERLESSTM TECHNOLOGY HIGH NOISE IMMUNITY (dV/dt) HIGH ITSM
A2
A2
G
DESCRIPTION The T835-600G and T850-600G triacs are using high performance SNUBBERLESS technology. They are intended for AC control applications using surface mount tecnology. These devices are perfectly suited where high commutation and surge performances are required.
A1
D2PAK
ABSOLUTE RATINGS (limiting values) Symbol VDRM VRRM IT(RMS) ITSM Parameter Repetitive peak off-state voltage RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C) I t Value for fusing Critical rate of rise of on-state current IG = 500 mA Tstg Tj T dIG /dt = 1 A/s. Non Repetitive Storage temperature range Operating junction temperature range Maximum temperature for soldering during 10s 100 - 40, + 150 - 40, + 125 260 C C
2
Value Tj = 125C Tc= 110C tp = 8.3ms tp = 10 ms 600 8 85 80 32 20
Unit V A A
It dI/dt
2
tp = 10 ms Repetitive F = 50 Hz
A2s A/s
May 1998 - Ed: 3A
1/5
T835-600G / T850-600G
THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Rth(j-c) Parameter Junction to ambient (S = 1 cm2) Junction to case for DC Junction to case for AC 360 conduction angle (F=50Hz) Value 45 2.1 1.6 Unit C/W C/W C/W
GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions VD=12V (DC) RL=33 Tj= 25C Quadrant I-II-III MIN MAX VGT VGD IH * IL VD=12V (DC) RL=33 VD=VDRM RL=3.3k IT= 100mA IG = 1.2 IGT Gate open Tj= 25C Tj= 125C Tj= 25C Tj = 25C I-III II VTM * IDRM IRRM dV/dt * (dI/dt)c * ITM= 11A tp= 380s VD = VDRM VR = VRRM Linear slope up to VD=67%VDRM Gate open Without snubber Tj= 25C Tj= 25C Tj= 125C Tj= 125C Tj= 125C I-II-III I-II-III MAX MIN MAX MAX MAX MAX MAX MAX MIN MIN 500 4.5 35 50 80 1.5 5 2 1000 7 35 1.3 0.2 50 60 100 V A mA V/s A/ms T835 2 50 V V mA mA T850 Unit mA IGM = 4 A (tp = 20 s)
* For either polarity of electrode A2 voltage with reference to electrode A1.
ORDERING INFORMATION
Add "-TR" suffix for Tape & Reel shipment
T
TRIAC CURRENT
8
35 - 600
SENSITIVITY
G
PACKAGE : G = D2PAK VOLTAGE
2/5
T835-600G / T850-600G
Fig. 1: Maximum power dissipation versus RMS on-state current. Fig. 2: Correlation between maximum power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink+contact.
P(W) 12
=180 =120 =90 a=60
Rth=5C/W Rth=2C/W
P(W) 12 10 8 6 4 2 0 0
=30
Tcase (C)
Rth=0C/W
10 8 6 4 2
Rth=8C/W
110
115
120
=180
IT(RMS)(A) 1 2 3 4 5 6 7 8
0 0
Tamb(C) 40 60 80 100 120 140
125
20
Fig. 3: RMS on-state current versus case temperature.
Fig. 4 : Relative variation of thermal impedance versus pulse duration.
IT(RMS)(A) 10
=180
K=[Zth/Rth] 1.00
Zth(j-c)
8 6
0.10
Zth(j-a)
4 2 Tcase(C) 0 0 25 50 75 100 125
0.01 1E-3 1E-2 1E-1 tp(s) 1E+0 1E+1 1E+2 5E+2
Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature (typical values).
IGT,IH[Tj]/IGT,IH[Tj=25C] 2.5 2.0 1.5 1.0 0.5 Tj(C) 0.0 -40 -20 0 20 40 60 80 100 120 140
IH IGT
Fig. 6: Non repetitive surge peak on-state current versus number of cycles.
ITSM(A) 80 70 60 50 40 30 20 10 0 1 Number of cycles 10 100 1000
3/5
Tj initial=25C F=50Hz
T835-600G / T850-600G
Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t. Fig. 8: On-state characteristics (maximum values).
ITM(A)
ITSM(A),It(As) 300
ITSM Tj initial=25C
100
Tj max.: Vto=0.83V Rt=56 m
100
It
10
Tj=Tj max.
Tj=25C
tp(ms) 10 1 2 5 10
VTM(V) 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35m).
Fig. 10: Typical reflow soldering heat profile, either for mounting on FR4 or metal-backed boards.
T (C)
Rth(j-a) (C/W) 80 70 60 50 40 30 20 10 0 0 4 8 12 S(Cu) (cm) 16 20 24 28 32 36 40
250 200 150 100 50 0
245C 215C
Epoxy FR4 board
Metal-backed board
t (s)
0 40 80 120 160 200 240 280 320 360
4/5
T835-600G / T850-600G
PACKAGE MECHANICAL DATA D2PAK DIMENSIONS REF.
A E L2 C2
Millimeters 4.30 2.49 0.03 0.70 1.25 0.45 1.21 8.95 10.00 4.88 15.00 1.27 1.40 0.40 0 8 0 1.40 4.60 0.169 2.69 0.098 0.23 0.001 0.93 0.027
Inches 0.181 0.106 0.009 0.037
Min. Typ. Max. Min. Typ. Max. A A1 A2
D
B B2 C
L L3 A1 B2 B G A2 2.0 MIN. FLAT ZONE V2 C R
0.048 0.055 0.60 0.017 0.024 1.36 0.047 9.35 0.352 10.28 0.393 5.28 0.192 15.85 0.590 1.40 0.050 1.75 0.055 0.016 8 0.054 0.368 0.405 0.208 0.624 0.055 0.069
C2 D E G L L2 L3 R V2
FOOT PRINT DIMENSIONS (in millimeters)
16.90
MARKING TYPE T835-600G T850-600G MARKING T835 600G T850 600G
10.30 1.30
5.08
PACKING
3.70 8.90
Tube : 50 units Tape and reel : 500 units
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
5/5

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